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- 🎊 ETH Deposit & Trading Carnival Kicks Off!
Join the Trading Volume & Net Deposit Leaderboards to win from a 20 ETH prize pool
🚀 Climb the ranks and claim your ETH reward: https://www.gate.com/campaigns/site/200
💥 Tiered Prize Pool – Higher total volume unlocks bigger rewards
Learn more: https://www.gate.com/announcements/article/46166
- 📢 ETH Heading for $4800? Have Your Say! Show Off on Gate Square & Win 0.1 ETH!
The next bull market prophet could be you! Want your insights to hit the Square trending list and earn ETH rewards? Now’s your chance!
💰 0.1 ETH to be shared between 5 top Square posts + 5 top X (Twitter) posts by views!
🎮 How to Join – Zero Barriers, ETH Up for Grabs!
1.Join the Hot Topic Debate!
Post in Gate Square or under ETH chart with #ETH Hits 4800# and #ETH# . Share your thoughts on:
Can ETH break $4800?
Why are you bullish on ETH?
What's your ETH holding strategy?
Will ETH lead the next bull run?
Or any o
- 🧠 #GateGiveaway# - Crypto Math Challenge！
💰 $10 Futures Voucher * 4 winners
To join:
1️⃣ Follow Gate_Square
2️⃣ Like this post
3️⃣ Drop your answer in the comments
📅 Ends at 4:00 AM July 22 (UTC)
- 🎉 #Gate Alpha 3rd Points Carnival & ES Launchpool# Joint Promotion Task is Now Live!
Total Prize Pool: 1,250 $ES
This campaign aims to promote the Eclipse ($ES) Launchpool and Alpha Phase 11: $ES Special Event.
📄 For details, please refer to:
Launchpool Announcement: https://www.gate.com/zh/announcements/article/46134
Alpha Phase 11 Announcement: https://www.gate.com/zh/announcements/article/46137
🧩 [Task Details]
Create content around the Launchpool and Alpha Phase 11 campaign and include a screenshot of your participation.
📸 [How to Participate]
1️⃣ Post with the hashtag #Gate Alpha 3rd - 🚨 Gate Alpha Ambassador Recruitment is Now Open!
📣 We’re looking for passionate Web3 creators and community promoters
🚀 Join us as a Gate Alpha Ambassador to help build our brand and promote high-potential early-stage on-chain assets
🎁 Earn up to 100U per task
💰 Top contributors can earn up to 1000U per month
🛠 Flexible collaboration with full support
Apply now 👉 https://www.gate.com/questionnaire/6888
The performance of 4-inch VB method gallium oxide substrate of Fujia Gallium Industry has reached the international advanced level.
On February 20, Jinshi Data News, the reporter learned from Hangzhou Institute of Optoelectronics that Hangzhou Opto-Mechatronics Institute's incubated enterprise Hangzhou Fujia Gallium Industry has made a major breakthrough in the field of vertical Bridgman (VB) method for growing gallium oxide crystals. The tested single crystal quality has reached the international advanced level, and now it is synchronously launching crystal growth equipment and process packages to the market. Test results show that the 4-inch VB crystal grown using Fujia Gallium equipment has no twinning inside, the single crystal substrate XRD full width at half maximum (FWHM) is better than 50arcsec, comparable to the quality of gallium oxide single crystal substrates prepared by the Czochralski method, and the performance has reached the international advanced level.